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AFP8483 - P-Channel Enhancement Mode MOSFET

Download the AFP8483 datasheet PDF. This datasheet also covers the AFP8483-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP8483-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP8483
Manufacturer Alfa-MOS
File Size 492.67 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8483 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP8434S P-Channel Enhancement Mode MOSFET
AFP8451 P-Channel Enhancement Mode MOSFET
AFP8452 P-Channel Enhancement Mode MOSFET
AFP8463 P-Channel Enhancement Mode MOSFET
AFP8473 P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8483 100V P-Channel Enhancement Mode MOSFET Features -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems.