AFP8483 Datasheet, Alfa-MOS

-100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application M.

Pin Description ( SOT-223 ) AFP8483 100V P-Channel Enhancement Mode MOSFET Features -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -1.

AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.