AS4C16M16D1 Datasheet PDF (16M x 16 bit DDR Synchronous DRAM) | Download Alliance Semiconductor AS4C16M16D1

AS4C16M16D1 - 16M x 16 bit DDR Synchronous DRAM

Description

Table 2.

Differential Clock: CK, CK are driven by the system clock.

Features

Fast clock rate: 200MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 4M x 16-bit for each bank.
Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte-write mask control.
DM Write Latency = 0.
Auto Refresh and Self Refresh.
8192.

Datasheet Details

Part number	AS4C16M16D1
Manufacturer	Alliance Semiconductor
File Size	1.44 MB
Description	16M x 16 bit DDR Synchronous DRAM
Datasheet	AS4C16M16D1 Datasheet
Additional preview pages of the AS4C16M16D1 datasheet.

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Full PDF Text Transcription

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AS4C16M16D1 16M x 16 bit DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.1, Sep. /2011) Features  Fast clock rate: 200MHz  Differential Clock CK & CK  Bi-directional DQS  DLL enable/disable by EMRS  Fully synchronous operation  Internal pipeline architecture  Four internal banks, 4M x 16-bit for each bank  Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved  Individual byte-write mask control  DM Write Latency = 0  Auto Refresh and Self Refresh  8192 refresh cycles / 64ms  Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)  Precharge & active power down  Power supplies: VDD & VDDQ = 2.5V  0.

Published: May 1, 2015 |