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AS4C32M16SC-7TIN Datasheet 512m Sdram

Manufacturer: Alliance Semiconductor

Overview: Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 24 - Rev.1.0 Sep. 2018 AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN 1 Overview This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics. 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Fully Synchronous to Positive Clock Edge.
  • Fast clock rate: 133 MHz.
  • Multiple Burst Read with Single Write Operation.
  • Four Banks controlled by BA0 & BA1.
  • Data Mask for Byte Control (x16,x32).
  • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved.
  • Automatic and Controlled Precharge Command.
  • Auto.

AS4C32M16SC-7TIN Distributor

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