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AS4C4M4F1 - 5V 4M x 4 CMOS DRAM

This page provides the datasheet information for the AS4C4M4F1, a member of the AS4C4M4F0 5V 4M x 4 CMOS DRAM family.

Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access ti

Features

  • Organization: 4,194,304 words × 4 bits.
  • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
  • Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O.
  • Fast page mode.
  • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh.
  • TTL-compatible, three-stat.

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Datasheet preview – AS4C4M4F1

Datasheet Details

Part number AS4C4M4F1
Manufacturer Alliance Semiconductor
File Size 259.46 KB
Description 5V 4M x 4 CMOS DRAM
Datasheet download datasheet AS4C4M4F1 Datasheet
Additional preview pages of the AS4C4M4F1 datasheet.

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Full PDF Text Transcription

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® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption - Active: 908 mW max - Standby: 5.
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