Austin Semiconductor AS4C4M4
AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability.| Part No. | AS4C4M4 |
|---|---|
| Datasheet | AS4C4M4 Download |
| Manufacturer |  Austin Semiconductor |
| Description | 16M FPM DRAM |
| Buy | Stock & Price |
FEATURES
● Fast Page Mode Operation● CAS\-before-RAS\ Refresh Capability
● RAS\-only and Hidden Refresh Capability
● Self-refresh Capability
● Fast Parallel Test Mode Capability
● TTL Compatible Inputs and Outputs
● Early Write or Output Enable Controlled Write
● JEDEC Standard Pinout
● Single +5V (±10%) Power Supply OPTIONS
● Timing 60ns access 70ns access
● Package Plastic TSOP, 24-pin MARKINGS -6 -7 PIN ASSIGNMENT DG
● Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC)
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. Other features include CAS\-before-RAS\, RAS\-only refresh, and Hidden refresh capabilities. It may be used as main memory for high level computers, microcomputers and personal computers. w w .D w XT IT t a S a e h W\ t e A10 A0 A1 A2 A3 Vcc U 4 7 8 9 10 11 12 .c m o 18 17 16 15 14 13 A8 A7 A6 A5 A4 Vss PIN A0 - A10 FUNCTION Address Inputs Data In/Out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable...
