AS4C4M4 Datasheet | Austin Semiconductor

FEATURES - Fast Page Mode Operation - CAS-before-RAS Refresh Capability - RAS-only and Hidden Refresh Capability - Self-refresh Capability - Fast Parallel Test Mode Capability - TTL patible Inputs and Outputs - Early Write or Output Enable Controlled Write - JEDEC Standard Pinout - Single +5V (±10%) Power Supply OPTIONS - Timing 60ns access 70ns access - Package Plastic TSOP, 24-pin MARKINGS -6 -7 PIN ASSIGNMENT - Operating Temperature Ranges Military (-55o C to +125o C) Industrial (-40o C to +85o C) GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS-before-RAS, RAS-only refresh, and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level puters, microputers and personal puters. w w .D w XT IT t a S a e h W t e A10 A0 A1 A2 A3 Vcc U 4 7 8 9 10 11 12 .c m o 18 17 16 15 14 13 A8 A7 A6 A5 A4 Vss PIN A0 - A10 FUNCTION Address Inputs Data In/Out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power (+5V) No Connect DQ0 -DQ3 VSS RAS CAS OE VCC NC PERFORMANCE RANGE SPEED -6 -7 t RAC 60 70 t CAC 15 18 t RC 110 130 t PC For more products and information please visit our web site at .austinsemiconductor. AS4C4M4 Rev. 1.0 5/03 Austin Semiconductor, Inc. reserves the right to change products or specifications without...