AS4C4M4F1 - 5V 4M x 4 CMOS DRAM

This page provides the datasheet information for the AS4C4M4F1, a member of the AS4C4M4F0 5V 4M x 4 CMOS DRAM family.

Product Overview

Alliance Semiconductor

Datasheet Details

Part number	AS4C4M4F1
Manufacturer	Alliance Semiconductor
File Size	259.46 KB
Description	5V 4M x 4 CMOS DRAM
Datasheet	AS4C4M4F1 Datasheet
Additional preview pages of the AS4C4M4F1 datasheet.

AS4C4M4F1 Product details

Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access ti

Features

Organization: 4,194,304 words × 4 bits.
High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O.
Fast page mode.
Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh.
TTL-compatible, three-stat.

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Other Datasheets by Alliance Semiconductor

AS4C4M4F0 - 5V 4M x 4 CMOS DRAM
AS4C4M4E0 - 4M x 4 CMOS DRAM
AS4C4M4E1 - 4M x 4 CMOS DRAM
AS4C4M16D1A - DDR
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AS4C4M16SA - 64M Synchronous DRAM
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Published: Nov 24, 2014 |