Datasheet4U Logo Datasheet4U.com

AS4C4M4F1 Datasheet 5v 4m X 4 CMOS Dram

Manufacturer: Alliance Semiconductor

Overview: ® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current Symbol tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5 AS4C4M4F0-50 AS4C4M4F1-50 50 25 12 13 85 25 135 1.0 4/11/01;

v.0.9 Alliance Semiconductor AS4C4M4F0-60 AS4C4M4F1-60 60 30 15 15 100 30 120 1.0 Unit ns ns ns ns ns ns mA mA P.

1 of 18 Copyright © Alliance Semiconductor.

Key Features

  • Organization: 4,194,304 words × 4 bits.
  • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
  • Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O.
  • Fast page mode.
  • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh.
  • TTL-compatible, three-stat.

More Datasheets from Alliance Semiconductor

Part Number Description
AS4C4M4F0 5V 4M x 4 CMOS DRAM
AS4C4M4E0 4M x 4 CMOS DRAM
AS4C4M4E1 4M x 4 CMOS DRAM
AS4C4M16D1A DDR
AS4C4M16S 64Mb / 4M x 16 bit Synchronous DRAM
AS4C4M16SA 64M Synchronous DRAM
AS4C4M16SA-C 64M - (4M x 16 bit) Synchronous DRAM
AS4C4M16SA-I 64M - (4M x 16 bit) Synchronous DRAM
AS4C4M32S 4M x 32 bit Synchronous DRAM
AS4C128M16D2A-25BCN 2Gb DDR2

AS4C4M4F1 Distributor