AS4C4M4F0 - 5V 4M x 4 CMOS DRAM

Product Overview

Alliance Semiconductor

Datasheet Details

Part number	AS4C4M4F0
Manufacturer	Alliance Semiconductor
File Size	259.46 KB
Description	5V 4M x 4 CMOS DRAM
Datasheet	AS4C4M4F0 Datasheet
Additional preview pages of the AS4C4M4F0 datasheet.

Product details

Description

A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current Symbol tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5 AS4C4M4F0-50 AS4C4M4F1-50 50

Features

Organization: 4,194,304 words × 4 bits.
High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O.
Fast page mode.
Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh.
TTL-compatible, three-stat.

📁 Similar Datasheet

AS4C4M4 - 16M FPM DRAM (Austin Semiconductor)
AS4C4067 - 64K x 4 DRAM (Austin Semiconductor)
AS4C4256 - (Austin Semiconductor)
AS4C4256883C - 256K x 4 DRAM (Austin Semiconductor)
AS4C1024 - 1M x 1 DRAM (Austin Semiconductor)
AS4C1259 - 256K x 1 DRAM (Austin Semiconductor)
AS4C1259883C - 256K x 1 DRAM (Austin Semiconductor)
AS4C1M16S - 1M x 16 bit Synchronous DRAM (Alliance Memory)

Other Datasheets by Alliance Semiconductor

AS4C4M4F1 - 5V 4M x 4 CMOS DRAM
AS4C4M4E0 - 4M x 4 CMOS DRAM
AS4C4M4E1 - 4M x 4 CMOS DRAM
AS4C4M16D1A - DDR
AS4C4M16S - 64Mb / 4M x 16 bit Synchronous DRAM
AS4C4M16SA - 64M Synchronous DRAM

Published: Nov 24, 2014 |