• Part: AS4C4M4F0
  • Description: 5V 4M x 4 CMOS DRAM
  • Manufacturer: Alliance Semiconductor
  • Size: 259.46 KB
Download AS4C4M4F0 Datasheet PDF
Alliance Semiconductor
AS4C4M4F0
AS4C4M4F0 is 5V 4M x 4 CMOS DRAM manufactured by Alliance Semiconductor.
® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features - Organization: 4,194,304 words × 4 bits - High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time - Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O - Fast page mode - Refresh - 4096 refresh cycles, 64 ms refresh interval for - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh - TTL-patible, three-state I/O - JEDEC standard package - 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP - Latch-up current ≥ 200 mA - ESD protection ≥ 2000 mV - Industrial and mercial temperature...