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AS4C8M16MSA-6BIN - 128M (8M x 16) Low Power SDRAM

General Description

The AS4C8M16MSA Family is

Key Features

  • - Functionality - Standard SDRAM Functionality - Programmable burst lengths : 1, 2, 4, 8 or full page - 64ms refresh period (4K cycle) - JEDEC Compatibility - Low Power Features - Auto TCSR(Temperature Compensated Self Refresh) - Partial Array Self Refresh power-saving mode - Deep Power Down Mode - Driver Strength Control - Operating Temperature Ranges: - Industrial (-40℃ to +85℃) AS4C8M16MSA-6BIN - LVCMOS Compatible IO Interface - 54ball FBGA with 0.8mm ball pitch - AS4C8M16MSA : Pb-Free & Hal.

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Datasheet Details

Part number AS4C8M16MSA-6BIN
Manufacturer Alliance Semiconductor
File Size 1.29 MB
Description 128M (8M x 16) Low Power SDRAM
Datasheet download datasheet AS4C8M16MSA-6BIN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AS4C8M16MSA-6BIN Revision History 128M (8M x 16) /RZ3RZHU6'5$0 AS4C801606$ 54ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Dec. 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 46 - Rev.1.0 Dec.