AS6C6416-55BIN - 4M x 16 bit Low Power CMOS SRAM

Alliance Semiconductor

General Description

The AS6C6416-55BIN is a 67,108,864-bit low power CMOS static random access memory organized as 4,194,304 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

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AS6C6416-55BIN 4m x 16 bit low power cmos sram by Alliance Semiconductor - Datasheet Preview

Datasheet Details

Part number	AS6C6416-55BIN
Manufacturer	Alliance Semiconductor
File Size	770.64 KB
Description	4M x 16 bit Low Power CMOS SRAM
Datasheet	AS6C6416-55BIN Datasheet

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Revision History 4M x 16 bit Low Power CMOS SRAM AS6C6416-55BIN 48ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet AS6C6416-55BIN Date June 08 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 11 - Rev.1.0 June. 2017 AS6C6416-55BIN FEATURE n Fast access time : 55ns n Low power consumption: Operating current : 12mA (TYP.) Standby current : 12µA (TYP.) n Single 2.7V ~ 3.6V power supply n All inputs and outputs TTL compatible n Fully static operation n Tri-state output n Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) n Data retention voltage : 1.2V (MIN.