AS8C801800, AS8C803600 Datasheet - Alliance Semiconductor

AS8C801800 3.3V Synchronous SRAMs

AS8C801800 Features

* 256K x 36, 512K x 18 memory configurations Supports high system speed:

* 150MHz 3.8ns clock access time

* LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byt

Datasheet Details

AS8C801800, AS8C803600

Alliance Semiconductor

8.09 MB

3.3v synchronous srams.

This datasheet PDF includes multiple part numbers: AS8C801800, AS8C803600.
Please refer to the document for exact specifications by model.

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