.
GSI Technology
GS832118GE-V - 36Mb Sync Burst SRAMs
GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Feature.
GSI Technology
GS84036CGT - 4Mb Sync Burst SRAMs
GS84018/32/36CGT-250/200/166/150 TQFP Commercial Temp Industrial Temp 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 250 MHz–150 MHz 3.3 V VD.
GSI Technology
GS864036T-250 - 72Mb Sync Burst SRAMs
GS864018/32/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 300 MHz–167 MHz 2.5 V .
Integrated Device Technology
IDT71V67602 - 3.3V Synchronous SRAMs
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 25.
GSI Technology
GS832272C-225M - 36Mb S/DCD Sync Burst SRAMs
GS832272C-225M 209-Pin BGA Military Temp 512K x 72 36Mb S/DCD Sync Burst SRAMs 225 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • Military T.
Integrated Silicon Solution
IS61DDPB24M18 - DDR-IIP (Burst of 2) CIO Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burs. t of 2) CIO Synchronous SRAMs (2.5 Cycle Read Latency) Advanced Information May 2009 Features • 2M x 36 or.
Integrated Silicon Solution
IS61DDPB22M36 - DDR-IIP (Burst of 2) CIO Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burs. t of 2) CIO Synchronous SRAMs (2.5 Cycle Read Latency) Advanced Information May 2009 Features • 2M x 36 or.
Integrated Silicon Solution
IS61DDB44M18 - DDR-II (Burst of 4) CIO Synchronous SRAMs
I7D7D2DMR-bII (2M x 36 & 4M x (Burst o. f 4) CIO 18) Synchronous SRAMs A MAY 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL.
Integrated Silicon Solution
IS61DDB42M36 - DDR-II (Burst of 4) CIO Synchronous SRAMs
I7D7D2DMR-bII (2M x 36 & 4M x (Burst o. f 4) CIO 18) Synchronous SRAMs A MAY 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL.
Integrated Silicon Solution
IS61DDB42M18 - DDR-II (Burst of 4) CIO Synchronous SRAMs
36 Mb (1M x 36. & 2M x 18) ISSIDDR-II (Burst of 4) CIO Synchronous SRAMs ® Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide.
Integrated Silicon Solution
IS61DDB41M36 - DDR-II (Burst of 4) CIO Synchronous SRAMs
36 Mb (1M x 36. & 2M x 18) ISSIDDR-II (Burst of 4) CIO Synchronous SRAMs ® Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide.
Integrated Silicon Solution
IS61DDB24M18 - DDR-II (Burst of 2) CIO Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18) . DDR-II (Burst of 2) CIO Synchronous SRAMs November 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL).
Integrated Silicon Solution
IS61DDB22M36 - DDR-II (Burst of 2) CIO Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18) . DDR-II (Burst of 2) CIO Synchronous SRAMs November 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL).
Integrated Silicon Solution
IS61DDB22M18 - DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36. & 2M x 18) ISSIDDR-II (Burst of 2) CIO Synchronous SRAMs ® Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide.
Integrated Silicon Solution
IS61DDB21M36 - DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36. & 2M x 18) ISSIDDR-II (Burst of 2) CIO Synchronous SRAMs ® Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide.
GSI
GS88132B - (GS88118B - GS88136B) Sync Burst SRAMs
www.DataSheet4U.com GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) 100-pin TQFP & 165-bump BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG.
NanoAmp Solutions
N01L083WC2A - Ultra-low Power SRAMs
www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L083WC2A 1M.
GSI Technology
GS8161E36B - (GS8161E18B - GS8161E36B) Sync Burst SRAMs
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow.
ISSI
IS61QDB44M18 - QUAD (Burst of 4) Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18) Q7 UAD (Burst o. f 4) Synchronous SRAMs Q November 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) f.
ISSI
IS61QDB42M36 - QUAD (Burst of 4) Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18) Q7 UAD (Burst o. f 4) Synchronous SRAMs Q November 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) f.
