Description
The AS7C33128FT18B is a high-performance CMOS 2-Mbit synchronous Static Random Access Memory (SRAM) device organized as 131,072 words × 18 bits.
Features
- Organization: 131,072 words × 18 bits Fast clock to data access: 6.5/7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow through operation Asynchronous output enable control Economical 100-pin TQFP package Individual byte write and Global write Multiple chip enables for easy expansion.
- 3.3V core power supply 2.5V or 3.3V I/O operation with separate V.
AS7C33128FT18B_AllianceSemiconductorCorporation.pdf