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Alliance Semiconductor Corporation

AS7C3364NTF32B Datasheet Preview

AS7C3364NTF32B Datasheet

(AS7C3364NTF32B / AS7C3364NTF36B) 3.3V 64K x 32/36 Flowthrough Synchronous SRAM

No Preview Available !

April 2005
AS7C3364NTF32B
AS7C3364NTF36B
®
3.3V 64K × 32/36 Flowthrough Synchronous SRAM with NTDTM
Features
• Organization: 65,536 words × 32 or 36 bits
• NTDarchitecture for efficient bus operation
• Fast clock to data access: 7.5/8.0/10.0 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
www.DataSheet4BU.yctoemwrite enables
• Clock enable for operation hold
Logic block diagram
A[15:0]
16
CE0
CE1
CE2
R/W
BWa
BWb
BWc
BWd
ADV / LD
LBO
ZZ
DQ
Aredgdirsetesrs
Burst logic
CLK
Control
logic
CLK
DQ[a,b,c,d] 32/36
D Data
Input
Q
Register
CLK
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate VDDQ
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
16
DQ
Write delay
addr. registers
CLK
16
CLK
32/36
64K x 32/36
SRAM
Array
32/36 32/36
32/36
CLK
CEN Output
Buffer
OE
32/36
OE
DQ[a,b,c,d]
Selection guide
-75 -80 -10 Units
Minimum cycle time
8.5 10 12 ns
Maximum clock access time
7.5 8.0 10 ns
Maximum operating current
260 230 200 mA
Maximum standby current
110 100
90 mA
Maximum CMOS standby current (DC)
30
30
30 mA
4/28/05, v 1.0
Alliance Semiconductor
P. 1 of 19
Copyright © Alliance Semiconductor. All rights reserved.




Alliance Semiconductor Corporation

AS7C3364NTF32B Datasheet Preview

AS7C3364NTF32B Datasheet

(AS7C3364NTF32B / AS7C3364NTF36B) 3.3V 64K x 32/36 Flowthrough Synchronous SRAM

No Preview Available !

AS7C3364NTF32B/36B
®
2 Mb Synchronous SRAM products list1,2
Org Part Number Mode Speed3
128KX18
AS7C33128PFS18B
PL-SCD
200/166/133 MHz
64KX32
AS7C3364PFS32B
PL-SCD
200/166/133 MHz
64KX36
AS7C3364PFS36B
PL-SCD
200/166/133 MHz
128KX18
AS7C33128PFD18B
PL-DCD
200/166/133 MHz
64KX32
AS7C3364PFD32B
PL-DCD
200/166/133 MHz
64KX36
AS7C3364PFD36B
PL-DCD
200/166/133 MHz
128KX18
AS7C33128FT18B
FT 6.5/7.5/8.0/10 ns
www.DataSheet4U.co6m4KX32
64KX36
AS7C3364FT32B
AS7C3364FT36B
FT 6.5/7.5/8.0/10 ns
FT 6.5/7.5/8.0/10 ns
128KX18
AS7C33128NTD18B
NTD-PL
200/166/133 MHz
64KX32
AS7C3364NTD32B
NTD-PL
200/166/133 MHz
64KX36
AS7C3364NTD36B
NTD-PL
200/166/133 MHz
128KX18
AS7C33128NTF18B
NTD-FT
7.5/8.0/10 ns
64KX32
AS7C3364NTF32B
NTD-FT
7.5/8.0/10 ns
64KX36
AS7C3364NTF36B
NTD-FT
7.5/8.0/10 ns
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
3 Refer corresponding product datasheets for the latest information on Clock Speed and Clock Access Time availability.
PL-SCD : Pipelined Burst Synchronous SRAM - Single Cycle Deselect
PL-DCD : Pipelined Burst Synchronous SRAM - Double Cycle Deselect
FT : Flow-through Burst Synchronous SRAM
NTD1-PL : Pipelined Burst Synchronous SRAM with NTDTM
NTD-FT : Flow-through Burst Synchronous SRAM with NTDTM
1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
4/28/05, v 1.0
Alliance Semiconductor
P. 2 of 19


Part Number AS7C3364NTF32B
Description (AS7C3364NTF32B / AS7C3364NTF36B) 3.3V 64K x 32/36 Flowthrough Synchronous SRAM
Maker Alliance Semiconductor Corporation
Total Page 19 Pages
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Alliance Semiconductor Corporation





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