Datasheet4U Logo Datasheet4U.com

AO3407 - 30V P-Channel MOSFET

Description

The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

Datasheet preview – AO3407

Datasheet Details

Part number AO3407
Manufacturer Alpha & Omega Semiconductors
File Size 312.88 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet AO3407 Datasheet
Additional preview pages of the AO3407 datasheet.

📁 Similar Datasheet

  • AO3407 - P-Channel MOSFET (Kexin)
  • AO3407 - P-Channel MOSFET (HOTTECH)
  • AO3407 - P-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
  • AO3407 - P-Channel MOSFET (VBsemi)
  • AO3407A - P-Channel MOSFET (VBsemi)
  • AO3400 - N-Channel MOSFET (Kexin)
  • AO3400 - N-Channel MOSFET (HOTTECH)
  • AO3400 - 30V N-Channel MOSFET (JinYu)
  • AO3400 - N-Channel MOSFET (VBsemi)
  • AO3401 - P-Channel MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AO3407 30V P-Channel MOSFET General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -4.1A < 52mW < 87mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -30 ±20 -4.1 -3.5 -25 1.4 0.
Published: |