Datasheet Details
| Part number | AO4446 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 142.08 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AO4446 Datasheet
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General Description
The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance.
This device is ideally suited for use in PWM applications.
Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications).
Key Features
- VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum.
