Datasheet4U Logo Datasheet4U.com

AO4448 - 80V N-Channel MOSFET

Datasheet Summary

Description

The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

📥 Download Datasheet

Datasheet preview – AO4448

Datasheet Details

Part number AO4448
Manufacturer Alpha & Omega Semiconductors
File Size 285.89 KB
Description 80V N-Channel MOSFET
Datasheet download datasheet AO4448 Datasheet
Additional preview pages of the AO4448 datasheet.

📁 Similar Datasheet

  • AO4448 - N-Channel MOSFET (Kexin)
  • AO4441 - P-Channel 60V MOSFET (VBsemi)
  • AO4447 - P-Channel 30V MOSFET (VBsemi)
  • AO4447A-HF - P-Channel MOSFET (Kexin)
  • AO4449 - P-Channel MOSFET (VBsemi)
  • AO4401 - P-Channel MOSFET (Freescale)
  • AO4402 - N-Channel MOSFET (Freescale)
  • AO4403 - P-Channel MOSFET (Freescale)
  • AO4403-HF - P-Channel MOSFET (Kexin)
  • AO4404 - N-Channel MOSFET (Freescale)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AO4448 80V N-Channel MOSFET SDMOS TM General Description The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 10A < 16mΩ < 20mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
Published: |