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AO4446 - N-Channel MOSFET

Datasheet Summary

Description

The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance.

This device is ideally suited for use in PWM applications.

Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum.

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Datasheet Details

Part number AO4446
Manufacturer Alpha & Omega Semiconductors
File Size 142.08 KB
Description N-Channel MOSFET
Datasheet download datasheet AO4446 Datasheet
Additional preview pages of the AO4446 datasheet.

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Full PDF Text Transcription

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AO4446 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Product ordering option. AO4446 and AO4446L are electrically identical. Features VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.
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