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AO4447A - 30V P-Channel MOSFET

General Description

Trench Power MOSFET technology Low RDS(ON) ESD Protected RoHS and Halogen-Free Compliant Applications Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested -30V -18.5A < 5.8mΩ < 8.2mΩ HBM Cla

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AO4447A 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • ESD Protected • RoHS and Halogen-Free Compliant Applications Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested -30V -18.5A < 5.8mΩ < 8.