Datasheet Details
| Part number | AO4448 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 285.89 KB |
| Description | 80V N-Channel MOSFET |
| Download | AO4448 Download (PDF) |
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| Part number | AO4448 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 285.89 KB |
| Description | 80V N-Channel MOSFET |
| Download | AO4448 Download (PDF) |
|
|
|
The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 10A < 16mΩ < 20mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±25 10 8 70 45 101 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 1: Nov 2010 www.aosmd.com Page 1 of 6 AO4448 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 80 V IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C 10 µA 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 3.3 4.2 V ID(ON) On state drain current VGS=10V, VDS=5V 70 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A TJ=125°C 13 16 mΩ 23.5 28.5 VGS=7V, ID=8A 15.4 20 mΩ gFS Forward Transconductance VDS=5V, ID=10A 23 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PAR
AO4448 80V N-Channel MOSFET SDMOS TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4448 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4448L | 80V N-Channel MOSFET |
| AO4440 | N-Channel MOSFET |
| AO4441 | 60V P-Channel MOSFET |
| AO4442 | N-Channel MOSFET |
| AO4443 | 40V P-Channel MOSFET |
| AO4444 | N-Channel MOSFET |
| AO4444L | 80V N-Channel MOSFET |
| AO4446 | N-Channel MOSFET |
| AO4447 | P-Channel MOSFET |
| AO4447A | 30V P-Channel MOSFET |