AO5803E transistor equivalent, dual p-channel enhancement mode field effect transistor.
VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V)
ESD PROTECTED
S1 G1
D2
SC-89-6
D1 G1 G2.
AO5803E and AO5803EL are electrically identical.
-RoHS compliant -AO5803EL is Halogen Free
Features
VDS (V) = -20V ID .
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO58.
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