AO5803E Datasheet Dual P-Channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor.

AO5803E dual p-channel enhancement mode field effect transistor by Alpha & Omega Semiconductors - Datasheet Preview

Datasheet Details

Part number	AO5803E
Manufacturer	Alpha & Omega Semiconductors
File Size	107.84 KB
Description	Dual P-Channel Enhancement Mode Field Effect Transistor
Download	AO5803E Download (PDF)

General Description

The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint.

It can be used as load switching, and wide variety of FET applications.

AO5803E and AO5803EL are electrically identical.

Key Features

VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V) ESD.

More Datasheets from Alpha & Omega Semiconductors

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AO5404E	N-Channel MOSFET
AO5600E	Complementary Enhancement Mode Field Effect Transistor