Datasheet Details
| Part number | AOB2146L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.05 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOB2146L-AlphaOmegaSemiconductors.pdf |
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Overview: AOT2146L/AOB2146L 40V N-Channel AlphaSGT TM General.
| Part number | AOB2146L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.05 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOB2146L-AlphaOmegaSemiconductors.pdf |
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|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized Ruggedness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 105A < 2.8mΩ < 3.9mΩ Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested TO-263 Top View TO220 Bottom View Top View D2PAK Bottom View D D D D D GD S AOT2146L Orderable Part Number AOT2146L AOB2146L S DG S G AOB2146L Package Type TO-220 TO-263 Form Tube Tape & Reel G G S S Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 105 100 345 42 33.5 38 217 119 47.5 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 50 0.85 Max 15 60 1.05 Units °C/W °C/W °C/W Rev.1.0: August 2017 www.aosmd.com Page 1 of 6 AOT2146L/AOB2146L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=2
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