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VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt Power Dissipation B TC=25°C Derate above 25°C VDS VGS VGS ID IDM IAR EAR EAS dv/dt PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 s.
