Datasheet Details
| Part number | AOB360A70L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 669.34 KB |
| Description | N-Channel Power Transistor |
| Download |
AOB360A70L Download (PDF)
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| Part number | AOB360A70L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 669.34 KB |
| Description | N-Channel Power Transistor |
| Download |
AOB360A70L Download (PDF)
|
|
|
|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting.
Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 48A < 0.36Ω 22.5nC 2.8mJ TO-220 TO-220F TO-263 D D2PAK D AOT360A70L S D G AOTF360A70L S D G S G G S AOB360A70L Orderable Part Number AOB360A70L AOT360A70L AOTF360A70L Package Type TO263 TO220 Green TO220F Green Form Tape&Reel Tube Tube Minimum Order Quantity 800 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)360A70L AOTF360A70L Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 12 12* 7.6 7.6* 48 3.4 5.8 50 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 156 29.5 1.25 0.23 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT(B)360A70L 65 0.5 0.8 AOTF360A70L 65 --4.2 Units °C/W °C/W °C/W Rev2.1: February 2024 www.aosmd.com Page 1 of 6 AOT360A70L/AOTF360A70L/AOB360A70L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆T
AOT360A70L/AOTF360A70L/AOB360A70L 700V, a MOS5 TM N-Channel Power Transistor.
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