Datasheet Details
| Part number | AOB380A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 647.42 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
 AOB380A60L Datasheet
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| Part number | AOB380A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 647.42 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
AOB380A60L Datasheet
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power TO-220 TO-220F Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-263 D2PAK D 700V 44A < 0.38Ω 18nC 2.6mJ D AOT380A60L S D G Orderable Part Number AOT380A60L AOTF380A60L AOB380A60L AOTF380A60L DS G Package Type TO-220 Green TO-220F Green TO263 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G (TJ=25°C, VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt Power Dissipation B TC=25°C Derate above 25°C VDS VGS VGS ID IDM IAR EAR EAS dv/dt PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case * Drain current limited by maximum junction temperature.
Symbol RqJA RqCS RqJC S G AOB380A60L Form Tube Tube Tape and reel G S Minimum Order Quantity 1000 1000 800 AOT(B)380A60L 600 ±20 ±30 11 7.2 44 2.5 3.1 AOTF380A60L 11* 7.2* 210 100 20 131 27 1.0 0.2 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C AOT(B)380A60L 65 0.5 0.95 AOTF380A60L 65 -4.6 Units °C/W °C/W °C/W Rev.3.1: May 2024 www.aosmd.com Page 1 of 6 AOTF380A60L/AOT380A60L/AOB380A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min T
AOTF380A60L/AOT380A60L/AOB380A60L 600V, a MOS5 TM N-Channel Power Transistor.
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