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Alpha & Omega Semiconductors

AOB410L Datasheet Preview

AOB410L Datasheet

100V N-Channel MOSFET

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AOT410L/AOB410L
100V N-Channel MOSFET
SDMOS TM
General Description
The AOT410L/AOB410L is fabricated with SDMOSTM
trench technology that combines excellent RDS(ON) with low
gate charge & low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS= 7V)
100% UIS Tested
100% Rg Tested
100V
150A
< 6.5mΩ (< 6.2mΩ∗)
< 7.5mΩ (< 7.2mΩ∗)
Top View
TO-220
Bottom View
Top View
TO-263
D2PAK
Bottom View
D
DD
DD
AOT410L
S
GD
Orderable Part Number
AOT410L
AOB410L
SDG
Package Type
TO-220
TO-263
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS,IAR
EAS,EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
S
G
AOB410L
Form
Tube
Tape & Reel
G
S
G
S
Minimum Order Quantity
1000
800
Maximum
100
±25
150
108
405
12
10
50
125
333
167
1.9
1.2
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Typ
12
54
0.35
Max
15
65
0.45
Units
°C/W
°C/W
°C/W
Rev.3.0: November 2013
www.aosmd.com
Page 1 of 7




Alpha & Omega Semiconductors

AOB410L Datasheet Preview

AOB410L Datasheet

100V N-Channel MOSFET

No Preview Available !

AOT410L/AOB410L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VDS=0V, VGS=±25V
VDS=5V ,ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
T0220
TJ=55°C
TJ=125°C
100
2
V
10
µA
50
±100 nA
34V
405 A
5.1 6.5
m
8.8 11
RDS(ON) Static Drain-Source On-Resistance
VGS=7V, ID=20A
T0220
VGS=10V, ID=20A
TO263
5.8 7.5 m
m
4.8 6.2
VGS=7V, ID=20A
TO263
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=20A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
5.5 7.2 m
70 S
0.63 1
V
150 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
5290
415
130
0.3
6622
594
215
0.64
7950
770
300
1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
85 107 129 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
23 28.5 34 nC
Qgd Gate Drain Charge
24 40 56 nC
tD(on)
Turn-On DelayTime
28 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5,
RGEN=3
22
43.5
ns
ns
tf Turn-Off Fall Time
14.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
19 27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
124 177 230 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: November 2013
www.aosmd.com
Page 2 of 7


Part Number AOB410L
Description 100V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 7 Pages
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