AOB420 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOB420
Manufacturer	Alpha & Omega Semiconductors
File Size	300.73 KB
Description	N-Channel MOSFET
Datasheet	AOB420-AlphaOmegaSemiconductors.pdf

The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

VDS (V) = 30V ID = 110A RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.0mΩ (VGS = 4.5V) TO-263 D2-PAK Top View Drain Connected to Tab GD S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C.

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Published: May 13, 2020 |