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AOB420 - N-Channel MOSFET

General Description

The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

AOB420L (Green Product) is offered in a Lead Free package.

Key Features

  • VDS (V) = 30V ID = 110A RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.0mΩ (VGS = 4.5V) TO-263 D2-PAK Top View Drain Connected to Tab GD S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TC=100°C B VGS ID Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C.

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Full PDF Text Transcription for AOB420 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOB420. For precise diagrams, and layout, please refer to the original PDF.

Rev 2: Oct 2004 AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AOB420 uses advanced trench technology to provi...

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eneral Description The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package. Features VDS (V) = 30V ID = 110A RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.0mΩ (VGS = 4.5V) TO-263 D2-PAK Top View Drain Connected to Tab GD S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TC=100°C B VGS ID Pulsed Drain Current Avala