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AOB403 - P-Channel MOSFET

Datasheet Summary

Description

The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications.

Features

  • VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power.

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Datasheet Details

Part number AOB403
Manufacturer Alpha & Omega Semiconductors
File Size 186.04 KB
Description P-Channel MOSFET
Datasheet download datasheet AOB403 Datasheet
Additional preview pages of the AOB403 datasheet.

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Full PDF Text Transcription

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AOB403 P-Channel Enhancement Mode Field Effect Transistor General Description The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications. Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications). AOB403L is a Green Product ordering option. AOB403 and AOB403L are electrically identical. Features VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.
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