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AOB405 - P-Channel MOSFET

Datasheet Summary

Description

The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications.

Features

  • VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.5V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Therm.

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Datasheet Details

Part number AOB405
Manufacturer Alpha & Omega Semiconductors
File Size 143.60 KB
Description P-Channel MOSFET
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www.DataSheet4U.com AOB405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Standard Product AOB405 is Pb-free (meets ROHS & Sony 259 specifications). AOB405L is a Green Product ordering option. AOB405 and AOB405L are electrically identical. Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) RDS(ON) < 72mΩ (VGS = -4.
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