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AOC2411 - 30V P-Channel MOSFET

Description

The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

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AOC2411 30V P-Channel MOSFET General Description Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Vds ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) -30V -3.4A < 45mΩ < 60mΩ WLCSP 1.6x1.6_4 Bottom View 3 D 2 D Top View Equivalent Circuit D SG Pin1(G) 41 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 TA=25°C VGS ID ISM Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -3.4 -52 0.
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