Datasheet Details
| Part number | AOCA33102E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 784.79 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOCA33102E-AlphaOmegaSemiconductors.pdf |
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Overview: AOCA33102E 12V Common-Drain Dual N-Channel MOSFET General.
| Part number | AOCA33102E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 784.79 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Datasheet | AOCA33102E-AlphaOmegaSemiconductors.pdf |
|
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• Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 1.4mΩ < 1.5mΩ < 1.8mΩ < 2.2mΩ HBM Class 2 AlphaDFNTM3x2.74_14 Top View Bottom View Pin1 Top View 6 8 14 5 13 4 12 3 11 2 10 1 7 9 Pin1 1,2,3,4,5,6: Source(FET1) 7: Gate(FET1) 9,10,11,12,13,14: Source(FET2) 8: Gate(FET2) Orderable Part Number AOCA33102E Package Type AlphaDFNTM3x2.74_14 Form Tape & Reel D1 D2 G1 G2 S1 S2 Minimum Order Quantity 8000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 50 110 4.2 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1.
Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2.
| Part Number | Description |
|---|---|
| AOCA33103E | 12V Common-Drain Dual N-Channel MOSFET |
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