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AOCA33104E
12V Common-Drain Dual N-Channel MOSFET
General Description
• Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant
Applications
• Battery protection switch • Mobile device battery charging and discharging
Product Summary
VSS
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 2.8mΩ < 3mΩ < 3.5mΩ < 4.2mΩ
HBM Class 2
AlphaDFNTM 2.98x1.49_10
Top View
D1
D2
Top View
Bottom View
10
7
8
9
6
2 3
5
G1
G2
1
4
Pin1
Pin1 1, 2, 4, 5: Source(FET1) 6, 7, 9, 10: Source(FET2)
S1
S2
3: Gate(FET1)
8: Gate(FET2)
Orderable Part Number
AOCA33104E
Package Type
AlphaDFNTM 2.98x1.