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AOCA33102E - 12V Common-Drain Dual N-Channel MOSFET

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Description

Trench Power MOSFET technology Ultra low RSS(ON) Common drain configuration for design simplicity RoHS 2.0 and Halogen-Free Compliant Applications Battery protection switch Mobile device battery charging and discharging Product Summary VSS

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Datasheet Details

Part number AOCA33102E
Manufacturer Alpha & Omega Semiconductors
File Size 784.79 KB
Description 12V Common-Drain Dual N-Channel MOSFET
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AOCA33102E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 1.4mΩ < 1.5mΩ < 1.8mΩ < 2.2mΩ HBM Class 2 AlphaDFNTM3x2.74_14 Top View Bottom View Pin1 Top View 6 8 14 5 13 4 12 3 11 2 10 1 7 9 Pin1 1,2,3,4,5,6: Source(FET1) 7: Gate(FET1) 9,10,11,12,13,14: Source(FET2) 8: Gate(FET2) Orderable Part Number AOCA33102E Package Type AlphaDFNTM3x2.
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