Datasheet Details
| Part number | AOD2910E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.41 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOD2910E Datasheet
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| Part number | AOD2910E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.41 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOD2910E Datasheet
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • Optimized for fast-switching applications Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 100V 37A < 23mΩ < 33mΩ HBM Class 2 Top View TO252 DPAK Bottom View D D D G Orderable Part Number AOD2910E S G G S S Package Type TO-252 Form Tape & Reel Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH VDS Spike Power Dissipation B Power Dissipation A 10µs TC=25°C TC=100°C TA=25°C TA=70°C C VDS VGS ID IDM IDSM IAS EAS VSPIKE PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 37 26 70 11 9 14 10 120 71.5 35.5 6.2 4.0 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 1.7 Max 20 50 2.1 Units °C/W °C/W °C/W Rev.1.0: September 2015 www.aosmd.com Page 1 of 6 AOD2910E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=16A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ
AOD2910E 100V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD2910E | N-Channel MOSFET | INCHANGE |
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AOD2910 | N-Channel MOSFET | INCHANGE |
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