Datasheet Details
| Part number | AOD413Y |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 142.88 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 AOD413Y Datasheet
|
|
|
Description
The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
Standard product AOD413Y is Pb free, inside and out.
Features
- VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Charac.