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AOD442 - 60V N-Channel MOSFET

Description

The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge.

Those devices are suitable for use as a load switch or in PWM applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 37A < 20mW < 25mW TO252 DPAK TO-251A Top View Bottom View Top View IPAK Bottom View D D D D S G G S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
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