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AOD454Y - N-Channel MOSFET

Description

The AOD454Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOD454Y is Pb free, inside and out.

Features

  • VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 40 ±20 12 12 30 12 20 20 10 2 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche ene.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOD454Y N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD454Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD454YL is a Green Product ordering option. AOD454Y and AOD454YL are electrically identical. TO-252 D-PAK Features VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.
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