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AOD607 - MOSFET

Description

The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 12A (V GS=10V) -12A (V GS = -10V) RDS(ON) RDS(ON) < 25 m Ω (VGS=10V) < 37 m Ω (VGS = -10V) < 62 m Ω (VGS = -4.5V) < 34 m Ω (VGS=4.5V) D1/D2 Top View Drain Connected to Tab G1 S1 G2 S2 n-channel S1 G1 S2 G2 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Max p-channel -3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOD607 Complementary Enhancement Mode Field Effect Transistor General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a Green Product ordering option. AOD607 and AOD607L are electrically identical. TO-252-4L D-PAK D1/D2 Features n-channel p-channel -30V VDS (V) = 30V ID = 12A (V GS=10V) -12A (V GS = -10V) RDS(ON) RDS(ON) < 25 m Ω (VGS=10V) < 37 m Ω (VGS = -10V) < 62 m Ω (VGS = -4.5V) < 34 m Ω (VGS=4.
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