Datasheet Details
| Part number | AOD66406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.25 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOD66406-AlphaOmegaSemiconductors.pdf |
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Overview: AOD66406/AOI66406 40V N-Channel AlphaSGT TM General.
| Part number | AOD66406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.25 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOD66406-AlphaOmegaSemiconductors.pdf |
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|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 60A < 6.1mΩ < 9.4mΩ Applications • High Frequency Switching and Synchronous Rectification • DC-Motor Driver 100% UIS Tested 100% Rg Tested TO-252 TO-251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D S G S AOD66406 Orderable Part Number AOD66406 AOI66406 G S D G G D S AOI66406 Package Type TO-252 TO-251A Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 60 45 150 25 20 20 60 52 20.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.9 Max 20 50 2.4 Units °C/W °C/W °C/W Rev.1.0: November 2017 www.aosmd.com Page 1 of 6 AOD66406/AOI66406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS
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