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AOD606 Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

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General Description

The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

-RoHS Compliant -Halogen Free*

Overview

AOD606 Complementary Enhancement Mode Field Effect Transistor.

Key Features

  • es n-channel p-channel VDS (V) = 40V -40V ID = 8A (VGS=10V) -8A (VGS = -10V) RDS(ON) RDS(ON) < 33 mΩ (VGS=10V) < 50 mΩ (VGS = -10V) < 47 mΩ (VGS=4.5V) < 70 mΩ (VGS = -4.5V) 100% UIS Tested! Top View D TO-252-4L D-PAK Bottom View D1/D2 S2 G2 S1 G1D1/D2 G1 S1 n-channel G2 S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 40 -40 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TC=25.

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