Datasheet4U Logo Datasheet4U.com

AOD603A - 60V Complementary MOSFET

General Description

The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOD603A 60V Complementary MOSFET General Description The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Product Summary N-Channel VDS= 60V ID= 13A (VGS=10V, silicon limit) RDS(ON) < 60mΩ (VGS=10V) < 85mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -60V -13A (VGS=-10V, silicon limit) RDS(ON) < 115mΩ (VGS=-10V) < 150mΩ (VGS=-4.