The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AOD603A
60V Complementary MOSFET
General Description
The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Product Summary
N-Channel VDS= 60V ID= 13A (VGS=10V, silicon limit) RDS(ON) < 60mΩ (VGS=10V) < 85mΩ (VGS=4.5V)
100% UIS Tested 100% Rg Tested
P-Channel -60V -13A (VGS=-10V, silicon limit) RDS(ON) < 115mΩ (VGS=-10V) < 150mΩ (VGS=-4.