AOD609G Datasheet Complementary Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD609G Complementary Enhancement Mode Field Effect Transistor.

Datasheet Details

Part number	AOD609G
Manufacturer	Alpha & Omega Semiconductors
File Size	524.23 KB
Description	Complementary Enhancement Mode Field Effect Transistor
Download	AOD609G Download (PDF)

The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

-RoHS Compliant -Halogen Free*

es n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested! Top View TO-252-4L D-PAK D1/D2 Bottom View Top View Drain Connected to Tab D1/D2 G2 S2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,G TC=.