AOD609G - Complementary Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Part number	AOD609G
Manufacturer	Alpha & Omega Semiconductors
File Size	524.23 KB
Description	Complementary Enhancement Mode Field Effect Transistor
Datasheet	AOD609G Datasheet
Additional preview pages of the AOD609G datasheet.

The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

es n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested! Top View TO-252-4L D-PAK D1/D2 Bottom View Top View Drain Connected to Tab D1/D2 G2 S2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,G TC=.

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Published: May 11, 2020 |