Datasheet Details
| Part number | AOI472A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 245.32 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AOI472A Datasheet
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| Part number | AOI472A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 245.32 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AOI472A Datasheet
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• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5mΩ < 10mΩ TopView TO252 DPAK Bottom View Top View TO-251A IPAK Bottom View D D DS G DG S S D G G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 16 41 Maximum Junction-to-Case Steady-State RθJC 2.5 Max 20 50 3 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 4: Nov 2012 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 2 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4 5 mΩ 5.4 6.8 VGS=4.5V, ID=20A 7.1 10 mΩ gFS Forward Transconductance VDS=5V, ID=20A 83 S VSD Diode Forward Voltage IS=1A,VG
AOD472A/AOI472A 30V N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
| AOI472 | N-Channel MOSFET |
| AOI478 | 100V N-Channel MOSFET |
| AOI403 | 30V P-Channel MOSFET |
| AOI409 | 60V P-Channel MOSFET |
| AOI4102 | 30V N-Channel MOSFET |
| AOI4126 | 100V N-Channel MOSFET |
| AOI4130 | 60V N-Channel MOSFET |
| AOI4146 | 30V N-Channel MOSFET |
| AOI418 | 30V N-Channel MOSFET |
| AOI4184 | 40V N-Channel MOSFET |