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Alpha & Omega Semiconductors

AOI4T60P Datasheet Preview

AOI4T60P Datasheet

4A N-Channel MOSFET

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AOD4T60P/AOI4T60P
600V,4A N-Channel MOSFET
General Description
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
100% UIS Tested
100% Rg Tested
700V
16A
< 2.1Ω
8.3nC
1.6µJ
TO-252
TO-251A
DPAK
IPAK
D
Top View
Bottom View
Top View
Bottom View
D
D
S
G
AOD4T60P
Orderable Part Number
AOD4T60P
AOI4T60P
G
S
S
GD
G
SD
AOI4T60P
Package Type
TO-252
TO-251A
Form
Tape & Reel
Tube
G
S
Minimum Order Quantity
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25°C
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
600
±30
4
2.4
16
4
8
203
50
5
83
0.7
-55 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
40
-
1.25
Maximum
50
0.5
1.5
Units
°C/W
°C/W
°C/W
Rev.1.0: May 2014
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOI4T60P Datasheet Preview

AOI4T60P Datasheet

4A N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
600
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
3
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=2A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
VDS=40V, ID=2A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Effective output capacitance, energy
related I
Effective output capacitance, time
related J
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg
Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=480V, ID=4A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=4A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
V
700
0.55
V/ oC
1
µA
10
±100 nA
4.2
5
V
1.75 2.1
3.2
S
0.78
1
V
4
A
16
A
522
pF
22
pF
20
pF
32
pF
2
pF
2.9
8.3
15
nC
3.4
nC
1.9
nC
21
ns
19
ns
25
ns
11
ns
309
ns
2.7
µC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.6A, VDD=150V, RG=10Ω, Starting TJ=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
www.aosmd.com
Page 2 of 6


Part Number AOI4T60P
Description 4A N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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