Datasheet4U Logo Datasheet4U.com

AOKS40B65H1 - IGBT

General Description

Latest AlphaIGBT (α IGBT) technology 650V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Short-circuit ruggedness Applicatio

📥 Download Datasheet

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AOKS40B60D1 IGBT
AOKS30B60D1 IGBT
AOK031A60 600V N-Channel Power Transistor
AOK033V120X2Q Power MOSFET
AOK040A60 N-Channel Power Transistor
AOK060V65X2 650V Silicon Carbide Power MOSFET
AOK065A60FD 600V N-Channel Power Transistor
AOK065V120X2 Silicon Carbide Power MOSFET
AOK065V65X2 Power MOSFET
AOK095A60 600V N-Channel Power Transistor

Full PDF Text Transcription for AOKS40B65H1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOKS40B65H1. For precise diagrams, tables, and layout, please refer to the original PDF.

AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient turn-on di/dt control...

View more extracted text
nology • 650V breakdown voltage • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness Applications • Power factor correction • UPS & Solar Inverters • Very High Switching Frequency Applications • Welding Machines Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) TO-247 TO-220 650V 40A 1.