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AOL1426 - N-Channel FET

Description

The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Fits SOIC8 footprint ! G D S Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipati.

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www.DataSheet4U.com AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications). AOL1426L is a Green Product ordering option. AOL1426 and AOL1426L are electrically identical. Features VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 13.5mΩ (VGS = 4.
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