Datasheet Details
| Part number | AON2290 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.41 KB |
| Description | 100V N-Channel MOSFET |
| Download | AON2290 Download (PDF) |
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Overview: AON2290 100V N-Channel MOSFET General.
| Part number | AON2290 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 452.41 KB |
| Description | 100V N-Channel MOSFET |
| Download | AON2290 Download (PDF) |
|
|
|
The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 100V 4.5A < 72mW < 97mW DFN 2x2B Top View Bottom View D D S D S G Pin 1 D D Pin 1 D G S Orderable Part Number AON2290 Package Type DFN 2x2B Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 4.5 3.5 25 2.8 1.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 37 66 Maximum Junction-to-Case Steady-State RqJC 6.5 Max 45 80 8.0 Units °C/W °C/W °C/W Rev.3.1: August 2023 www.aosmd.com Page 1 of 6 AON2290 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.7 2.3 2.8 V ID(ON) On state drain current VGS=10V, VDS=5V 25 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A TJ=125°C 59 72 110 134 mW VGS=4.5V, ID=4A 77 97 mW gFS Forward Transconductance VDS=5V, ID=4.5A 13 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 1 V IS Maximum Body-Diode Continuous Current 3.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Tra
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