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AON2407 - 30V P-Channel MOSFET

General Description

The AON2407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON2407 30V P-Channel MOSFET General Description The AON2407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -30V -6.3A < 37.5mΩ < 46mΩ < 70mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D G S Pin 1 D Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation A C Maximum -30 ±12 -6.3 -5 -34 2.8 1.