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AON2401 - 8V P-Channel MOSFET

General Description

The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

VDS ID (at VGS=-2.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON2401 8V P-Channel MOSFET General Description The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-2.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) RDS(ON) (at VGS =-1.2V) -8V -8A < 22mΩ < 28mΩ < 36mΩ < 53mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D Pin 1 G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation A C Maximum -8 ±5 -8 -6 -32 2.8 1.