Datasheet Details
| Part number | AON2409 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.59 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON2409_AlphaOmegaSemiconductors.pdf |
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Overview: AON2409 30V P-Channel MOSFET General.
| Part number | AON2409 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.59 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON2409_AlphaOmegaSemiconductors.pdf |
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Product Summary • The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
• RoHS and Halogen-Free Compliant VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) -30V -8A < 32mΩ < 53mΩ Top View DFN 2x2B Bottom View D D S D S Pin 1 D D G Pin 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -8 -6.3 -32 2.8 1.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ 37 66 Max 44 79 D S Units V V A W °C Units °C/W °C/W Rev 2.0 : October 2014 www.aosmd.com Page 1 of 5 AON2409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-8A VGS=-4.5V, ID=-6A Forward Transconductance VDS=-5V, ID=-8A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -30 -1.1 -32 -1.75 -1 -5 ±100 -2.3 26.5 32 33.6 41 42 53 20 -0.7 -1 3.5 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 530 pF 114 pF 75 pF 11 22 Ω SWITCHING PARAMETERS Qg
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