Datasheet Details
| Part number | AON6520 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 270.28 KB |
| Description | N-Channel MOSFET |
| Download | AON6520 Download (PDF) |
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| Part number | AON6520 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 270.28 KB |
| Description | N-Channel MOSFET |
| Download | AON6520 Download (PDF) |
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|
|
The AON6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 50A < 8.5mΩ < 11mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 30 ±20 50 29 140 11 9 35 31 31 12.5 1.9 1.2 -55 to 150 Units V V A VGS TC=25° C TC=100° C C TA=25° TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.05mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 3.4 Max 30 64 4 Units ° C/W ° C/W ° C/W Rev 0: Aug 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6520 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.5 140 7 10 8.5 55 0.72 1 35 920 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 125 60 0.55 16 VGS=10V, VDS=15V, ID=20A 7.6 2 3 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 7 11 1150 180 105 1.1 20 9.5 2.7 5 6.5 2 17 3.5 8.7 13.5 10.5 16 1380 235 150 1.65 24 11.4 3.2 7 8.5 12 11 1.95 Min 30 1 5 100 2.5 Typ Max Units V µA n
AON6520 30V N-Channel MOSFET General.
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